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TIP36E

Part Number	TIP36E
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Power Transistor TIP36E DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sus...
Datasheet	TIP36E PDF File

Overview

isc Silicon PNP Power Transistor TIP36E DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = -1.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·Complement to Type TIP35E ·Current Gain-Bandwidth Product- : fT= 3.
0MHz(Min)@IC= -1.
0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -25 A ICM Collector Current-peak -40 A IB Base ...

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