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TIP147

Part Number	TIP147
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Em...
Datasheet	TIP147 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type TIP142 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.
5 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.
7 ℃/W TIP147 isc website：www.
iscsemi...

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