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2SC2261

Part Number	2SC2261
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25℃ ·Collector-Emitter Breakdo...
Datasheet	2SC2261 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.
)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.
) ·Complement to Type 2SA981 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SC...

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