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2SC2336

Part Number	2SC2336
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)C...
Datasheet	2SC2336 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1006 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.
0 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Peak 3.
0 A Collector Power Dissipation@ Ta=25℃ 1.
5 PC W Collector Power Dissipation@TC=25℃ 25...

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