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2SC3822

Part Number	2SC3822
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 20, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC3822 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min)...
Datasheet	2SC3822 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3822 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converters ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction...

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