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2SD1352

Part Number	2SD1352
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) ·Good Linearity ...
Datasheet	2SD1352 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IE Emitter Current-Continuous 4 A IB Base Current-Continuous 0.
4 A PC Collector Power Dissipation@ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -...

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