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2SD1417

Part Number	2SD1417
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1417 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(...
Datasheet	2SD1417 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1417 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Voltage ·Complement to Type 2SB1022 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous Collector Power Diss...

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