DatasheetsPDF.com

2SD1441

INCHANGE
Part Number 2SD1441
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Spee...
Datasheet PDF File 2SD1441 PDF File

2SD1441
2SD1441


Overview
isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 4 A ICP Collector Current-Peak 15 A IBP Base Current-Peak Collector Power Dissipation @ Ta= 25℃ PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3.
5 A 2.
5 W 70 130 ℃ Tstg Storage Temperature Range -55~130 ℃ isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE DC Current Gain IC= 3A; IB= 1A VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 3A; VCE= 10V fT Current-Gain—Bandwidth Product IC= 0.
5A; VCE= 10V VECF C-E Diode Forward Voltage IF= 4A ts Storage Time tf Fall Time IC= 3A, IBend= 1A, Lleak= 5μH 2SD1441 MIN TYP.
MAX UNIT 5 V 1.
0 V 1.
5 V 50 μA 1.
0 mA 5 15 2 MHz 2.
2 V 9.
0 μs 0.
75 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or m...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)