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2SD1444

INCHANGE
Part Number 2SD1444
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Power Transistor 2SD1444 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·...
Datasheet PDF File 2SD1444 PDF File

2SD1444
2SD1444

Overview
isc Silicon NPN Power Transistor 2SD1444 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.
6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V (Min) ·Complement to Type 2SB956 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown ...


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