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2SD1486

Part Number	2SD1486
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SD1486 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 4A ·...
Datasheet	2SD1486 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1486 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.
0V(Max)@IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB1055 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 3 W 70 150 ℃ Ts...

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