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BD135

Part Number	BD135
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Power Transistor BD135 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sust...
Datasheet	BD135 PDF File

Overview

isc Silicon NPN Power Transistor BD135 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.
15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 45V(Min) ·Complement to type BD136 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.
5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissi...

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