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BD176

Part Number	BD176
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon PNP Power Transistor BD176 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= -0.15A ·Collector-Emitter...
Datasheet	BD176 PDF File

Overview

isc Silicon PNP Power Transistor BD176 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= -0.
15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Complement to type BD175 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -7 A 30 W 150 ℃ Tstg S...

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