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BD177

Part Number	BD177
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Power Transistor BD177 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= 0.15A ·Collector-Emitter ...
Datasheet	BD177 PDF File

Overview

isc Silicon NPN Power Transistor BD177 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= 0.
15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) ·Complement to type BD178 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 30 W 150 ℃ Tstg Storage ...

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