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BD808

INCHANGE
Part Number BD808
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 22, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE =30@ IC= -2A ·Collector-Emitter Sustaining Voltag...
Datasheet PDF File BD808 PDF File

BD808
BD808

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE =30@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·Complement to Type BD807 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 90 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
39 ℃/W BD808 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS T...


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