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BD810

Part Number	BD810
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE =30@ IC= -2A ·Collector-Emitter Sustaining Voltag...
Datasheet	BD810 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE =30@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Complement to Type BD809 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 IB Base Current -6 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 150 Tstg Storage Temper...

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