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BDT31

INCHANGE
Part Number BDT31
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 22, 2020
Detailed Description isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter...
Datasheet PDF File BDT31 PDF File

BDT31
BDT31


Overview
isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.
0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C ·Complement to Type BDT32/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER BDT31 VALUE 80 BDT 31A 100 VCBO Collector-Base Voltage BDT 31B 120 BDT 31C 140 BDT31 40 VCEO Collector-Emitter Voltage BDT 31A 60 BDT 31B 80 BDT 31C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 3 ICM Collector Current-Peak 5 IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Ttemperature Range 1 40 150 -65~15 0 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 3.
12 70 UNIT ℃/W ℃/W isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDT31/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT31 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT 31A BDT 31B IC= 30mA; IB= 0 BDT 31C VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
375A VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 BDT31/A VCE= 30V; IB= 0 ICEO Collector Cutoff Current BDT31B/C VCE= 60V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC= 3A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.
5A ; VCE= 10V Switching Times ton Turn-On Time toff Turn-Off Time IC= 1.
0A; IB1= -IB2= 0.
1A MIN TYP.
MAX UNIT 40 60 V 80 100 1.
2 V 1.
8 V 0.
2 mA 0.
1 mA...



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