DatasheetsPDF.com

BDW40

Part Number	BDW40
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·H...
Datasheet	BDW40 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 2.
0V(Max.
)@ IC= 5.
0A = 3.
0V(Max.
)@ IC= 10A ·Complement to Type BDW45 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Col...

Similar Datasheet

BDW10 NPN Transistor - INCHANGE
BDW12 NPN Transistor - INCHANGE
BDW21 Bipolar NPN Device - Seme LAB
BDW21 NPN Transistor - INCHANGE
BDW21C Bipolar NPN Device - Seme LAB
BDW22 Bipolar PNP Device - Seme LAB
BDW22 PNP Transistor - INCHANGE
BDW23 NPN Transistor - Power Innovations Limited
BDW23 Hammer Drivers/ Audio Amplifiers - Fairchild Semiconductor
BDW23 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)