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BDW47

Part Number	BDW47
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor BDW47 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100...
Datasheet	BDW47 PDF File

Overview

isc Silicon PNP Darlington Power Transistor BDW47 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -2.
0V(Max.
)@ IC= -5.
0A = -3.
0V(Max.
)@ IC= -10A ·Complement to Type BDW42 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current...

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