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BU109

Part Number	BU109
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor BU109 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltag...
Datasheet	BU109 PDF File

Overview

isc Silicon NPN Power Transistor BU109 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150 V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage- VBE= -1.
5V 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak(Repet...

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