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BU406

Part Number	BU406
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor BU406 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)=...
Datasheet	BU406 PDF File

Overview

isc Silicon NPN Power Transistor BU406 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEV Collector-Emitter Voltage 400 VCEO Collector-Emitter Voltage 200 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 7 ICP Collector Current-Peak Repetitive 10 ICP Collector Current- Peak (10ms) 15 IB Base Current 4 PC Collector Power Dissipation @ TC=25℃ ...

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