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BU408

INCHANGE
Part Number BU408
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 400ns(Max) ·Lo...
Datasheet PDF File BU408 PDF File

BU408
BU408


Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 400ns(Max) ·Low Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEV Collector-Emitter Voltage 400 VCEO Collector-Emitter Voltage 200 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 7 ICP Collector Current-Peak Repetitive 10 ICP Collector Current- Peak (10ms) 15 IB Base Current 4 PC Collector Power Dissipation @ TC=25℃ 60 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.
08 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃...



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