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BU426

Part Number	BU426
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor BU426 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 375V(Min) ·Hig...
Datasheet	BU426 PDF File

Overview

isc Silicon NPN Power Transistor BU426 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 375V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switch-mode CTV supply systems applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCES Collector-Emitter Voltage VBE= 0 800 V VCEO Collector-Emitter Voltage 375 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ ...

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