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BU508DFI

Part Number	BU508DFI
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Da...
Datasheet	BU508DFI PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCES= 1500V(Min.
) ·Collector Current- IC = 8.
0A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 8.
0 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SY...

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