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2N4347

Part Number	2N4347
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 25, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
Datasheet	2N4347 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for application in industrial and commercial equipment including high fidelity audio amplifier,series and shunt regulators and power switches ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 140 V 120 V VEBO IC PC TJ Tstg Emitter-Base Voltage 7 V Collector Current-Continuous 5 A Collector Power Dissipation@TC=25℃ 100 W Junction Temperature -65~200 ℃ Sto...

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