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B1284

INCHANGE
Part Number B1284
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 27, 2020
Detailed Description isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min.)@IC= -5A ·Low Collecto...
Datasheet PDF File B1284 PDF File

B1284
B1284

Overview
isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min.
)@IC= -5A ·Low Collector Saturation Voltage- : VCE(sat)= -1.
5V(Max)@IC= -5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak -100 V -100 V -7 V -10 A -15 A IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
8 A -1.
5 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1284 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Power Transistor 2SB1284 ELECTRICAL CHARACTERISTICS TC=25℃ unl...


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