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MJ15011

Part Number	MJ15011
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistor MJ15011 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20(Min.)@...
Datasheet	MJ15011 PDF File

Overview

isc Silicon NPN Power Transistor MJ15011 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20(Min.
)@IC = 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.
5V(Max)@ IC = 4A ·Complement to the PNP MJ15012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications.
These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEO(SUS) Collector-Emitter Voltage 250 VCEX Collector-Emitter Voltage 250 VEBO Emitter-Base Vo...

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