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MJ15015

INCHANGE
Part Number MJ15015
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 27, 2020
Detailed Description isc Silicon NPN Power Transistor MJ15015 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20-70@IC ...
Datasheet PDF File MJ15015 PDF File

MJ15015
MJ15015

Overview
isc Silicon NPN Power Transistor MJ15015 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20-70@IC = 4A,VCE= 4V ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
1 V(Max)@ IC = 4A ·Complement to the PNP MJ15016 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications, and can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters,inverters and etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEV VCEO Collector-Base Voltage Collector-Emitter Voltage Base Reversed Biased Collector-Emitter Voltage 200 V 200 V 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PD Total Power Dissipation@TC=25℃ 180 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.
98 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJ15015 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.
4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.
3A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 15A; IB= 7.
0A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 60V; VBE(off)= 0 VCB= 200;IE= 0 VCB= 200;IE= 0V;TC=150℃ VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 4A ; VCE= 2V hFE-2 DC Current Gain IC= 4A ; VCE= 4V hFE-3 Is/b COB DC Current Gain Second Breakdown Collector Current with Base Forward Biased Output Capacitance IC= 10A ; VCE= 4V VCE= 60V,t= 0.
5 s,Nonrepetitive IE= ...


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