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MJ15022

INCHANGE
Part Number MJ15022
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 27, 2020
Detailed Description isc Silicon NPN Power Transistors MJ15022/15024 DESCRIPTION ·Complement to Type PNP MJ15023/15025 ·Excellent Safe Oper...
Datasheet PDF File MJ15022 PDF File

MJ15022
MJ15022


Overview
isc Silicon NPN Power Transistors MJ15022/15024 DESCRIPTION ·Complement to Type PNP MJ15023/15025 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT MJ15022 350 VCBO Collector-Base Voltage V MJ15024 400 MJ15022 200 VCEO Collector-Emitter Voltage V MJ15024 250 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Collector Current-Peak (1) IB Base Current-Continuous 16 A 30 A 5 A PD Total Power Dissipation @TC=25℃ 250 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle _ 10%.
MAX 0.
70 UNIT ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJ15022/15024 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter (1) Sustaining Voltage MJ15022 MJ15024 IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.
8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.
2A VBE(on) Base-Emitter On Voltage IC= 8A ; VCE= 4V ICEO Collector Cutoff Current MJ15022 VCE= 150V; IB= 0 MJ15024 VCE= 200V; IB= 0 ICBO Collector Cutoff Current MJ15022 VCB= 200V; IE= 0 MJ15024 VCB= 250V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 8A ; VCE= 4V hFE-2 Is/b COB DC Current Gain Second Breakdown Collector Current With Base Forward Biased Output Capacitance IC= 16A ; VCE= 4V VCE= 50Vdc,t=0.
5 s, Nonrepetitive VCE= 80Vdc,t=0.
5 s,Nonrepetitive IE= 0 ; VCB= 10V; ftest= 1.
0MHz fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V; ftest= 1.
0MHz MI...


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