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MJE52T

Part Number	MJE52T
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistor MJE52T DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS) = 300V(Min) ·Min...
Datasheet	MJE52T PDF File

Overview

isc Silicon NPN Power Transistor MJE52T DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS) = 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications.
Especially well suited for switching power supply applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEO Collector-Emitter Voltage 300 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 5 ICM Collector Current-Peak 10 IB Base Current-Continuous 2 PC Collector Power Dissipation @ TC=25℃ 80 TJ Juncti...

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