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TIP115

Part Number	TIP115
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor TIP115 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1A ·Coll...
Datasheet	TIP115 PDF File

Overview

isc Silicon PNP Darlington Power Transistor TIP115 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.
5V(Max)@ IC= -2A ·Complement to Type TIP110 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Curre...

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