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TIP120

INCHANGE
Part Number TIP120
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 27, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor TIP120 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Colle...
Datasheet PDF File TIP120 PDF File

TIP120
TIP120

Overview
isc Silicon NPN Darlington Power Transistor TIP120 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.
0V(Max)@ IC= 3A = 4.
0V(Max)@ IC= 5A ·Complement to Type TIP125 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature 120 mA 65 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
92 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TIP120 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA 2.
0 V VCE(sat)-2 Collector-Emitter Saturation voltage IC= 5A ,IB= 20mA 4.
0 V VBE(on) Base-Emitter On Voltage IC= 3.
0A ; VCE= 3V 2.
5 V ICBO Collector Cutoff Current VCB= 60V, IE= 0 0.
2 mA ICEO Collector Cutoff Current VCE= 30V, IB= 0 0.
5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2 mA hFE-1 DC Current Gain IC= 0.
5A; VCE= 3V 1000 hFE-2 DC Current Gain IC= 3.
0A; VCE= 3V 1000 COB Output Capacitance IE= 0; VCB= 10V, f= 0.
1MHz 200 pF NOTICE： ISC reserves the rights to make changes of the content herein the ...


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