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2SB898

Part Number	2SB898
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB898 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR...
Datasheet	2SB898 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB898 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
2(Max.
) @IC= -3A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A PC Collector Power Dissipation@TC=25℃ 25 ...

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