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2SC1880

Part Number	2SC1880
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SC1880 DESCRIPTION ·High DC Current Gain ·Collecto...
Datasheet	2SC1880 PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SC1880 DESCRIPTION ·High DC Current Gain ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current Collector P...

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