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2SC2023

Part Number	2SC2023
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2023 DESCRIPTION ·Silicon NPN triple diffused planar transi...
Datasheet	2SC2023 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2023 DESCRIPTION ·Silicon NPN triple diffused planar transistor ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300(V)(Min.
) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~1...

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