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2SC2166

Part Number	2SC2166
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2166 DESCRIPTION ·High Power Gain- : Gpe≥ 13.8dB @f= 27MHz,...
Datasheet	2SC2166 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2166 DESCRIPTION ·High Power Gain- : Gpe≥ 13.
8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCER Collector-Emitter Voltage RBE= 10Ω 45 V VEBO Emitter-Base Voltage 4 V IC Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 4 A 12.
5 W 1.
5 150 ℃ Tstg Storage Temp...

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