DatasheetsPDF.com

2SC3175

Part Number	2SC3175
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3175 DESCRIPTION ·Low Collector Saturation Voltage ·High sw...
Datasheet	2SC3175 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3175 DESCRIPTION ·Low Collector Saturation Voltage ·High switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for use in high definition CRT display(VCC=12 to 24V) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ...

Similar Datasheet

2SC3101 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3102 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3103 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3104 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3105 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3110 Silicon Power Transistor - Inchange
2SC3112 TRANSISTOR - Toshiba Semiconductor
2SC3113 Silicon NPN Transistor - Toshiba Semiconductor
2SC3114 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SC3116 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)