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2SC3843

Part Number	2SC3843
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3843 DESCRIPTION ·High Breakdown Voltage ·High Switching Sp...
Datasheet	2SC3843 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3843 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for silicon high speed transistor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 10 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150...

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