DatasheetsPDF.com

2SC4960

Part Number	2SC4960
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4960 DESCRIPTION ·High Collector-Base Breakdown Voltage- : ...
Datasheet	2SC4960 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4960 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collecto...

Similar Datasheet

2SC4900 NPN TRANSISTOR - Hitachi Semiconductor
2SC4901 NPN TRANSISTOR - Hitachi Semiconductor
2SC4901 Silicon NPN Transistor - Inchange Semiconductor
2SC4901 Silicon NPN Transistor - Renesas
2SC4901YK NPN Transistor - INCHANGE
2SC4905 Silicon NPN Bipolar Transistor - Hitachi Semiconductor
2SC4907 NPN TRANSISTOR - Sanken electric
2SC4907 SILICON POWER TRANSISTOR - SavantIC
2SC4907 NPN Transistor - INCHANGE
2SC4908 NPN TRANSISTOR - Sanken electric

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)