DatasheetsPDF.com

2SD463

Part Number	2SD463
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD463 DESCRIPTION ·Collector-Emitter Breakdown Vo...
Datasheet	2SD463 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD463 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 3000(Min) @IC= 5A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO IC ICP IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Di...

Similar Datasheet

2SD400 PNP / NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD400 NPN Transistor - LGE
2SD400 SILICON NPN TRANSISTOR - LZG
2SD400 NPN Transistor - Yukuto
2SD400 Silicon NPN transistor - Blue Rocket Electronics
2SD401 Silicon Transistor - Wing Shing Computer Components
2SD401 SILICON POWER TRANSISTOR - SavantIC
2SD401A Power Transistor - Mospec Semiconductor
2SD401A Transistor - NEC
2SD401A SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)