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2SD1355

Part Number	2SD1355
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1355 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sa...
Datasheet	2SD1355 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1355 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.
0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Complement to Type 2SB995 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Recommended for 30W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Powe...

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