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2SD1375

INCHANGE
Part Number 2SD1375
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1375 DESCRIPTION ·High Collector-Base Voltage- : VCBO= 300V...
Datasheet PDF File 2SD1375 PDF File

2SD1375
2SD1375

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1375 DESCRIPTION ·High Collector-Base Voltage- : VCBO= 300V(Min.
) ·Good Linearity of hFE ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage,high-speed,power switching regulators and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.
0 A ICM Collector Current-Peak 6.
0 A IB Base Current 1.
0 A PC Collect...


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