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2SD1492

Part Number	2SD1492
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1492 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Mi...
Datasheet	2SD1492 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1492 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature ...

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