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2SD1522

Part Number	2SD1522
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1522 DESCRIPTION ·Collector-Emitter Breakdown V...
Datasheet	2SD1522 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1522 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High DC Current Gain : hFE= 500(Min) @ IC= 5A, VCE= 3V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Di...

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