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2SD1532

Part Number	2SD1532
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1532 DESCRIPTION ·Collector-Emitter Breakdown V...
Datasheet	2SD1532 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1532 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 4V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Collector Current-Peak 4 A 8 A IB Base Current PC Collector Power Di...

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