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2SD1540

Part Number	2SD1540
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD1540 DESCRIPTION ·High DC current gain- hFE = ...
Datasheet	2SD1540 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD1540 DESCRIPTION ·High DC current gain- hFE = 800 (Min) @ IC = 0.
5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 6 A IB Base Current 0.
2 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction T...

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