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2SD1550

Part Number	2SD1550
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor isc Product Specification 2SD1550 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1000V ...
Datasheet	2SD1550 PDF File

Overview

isc Silicon NPN Power Transistor isc Product Specification 2SD1550 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1000V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications.
·Switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg...

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