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2SD1551

Part Number	2SD1551
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor isc Product Specification 2SD1551 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V ...
Datasheet	2SD1551 PDF File

Overview

isc Silicon NPN Power Transistor isc Product Specification 2SD1551 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications.
·Switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.
5 A 50 W 150 ℃ Tst...

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