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2SD1982

Part Number	2SD1982
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1982 DESCRIPTION ·Collector-Emitter Breakdown Vo...
Datasheet	2SD1982 PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1982 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 80 W 150 ℃ Tstg Storage Te...

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