DatasheetsPDF.com

2SD1983

Part Number	2SD1983
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1983 DESCRIPTION ·High DC Current Gain : hFE= 4...
Datasheet	2SD1983 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1983 DESCRIPTION ·High DC Current Gain : hFE= 4000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.
5V(Max.
)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low-frequency amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.
5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=...

Similar Datasheet

2SD1902 PNP/NPN Triple Diffused Planar Type Silicon Transistors - Sanyo Semicon Device
2SD1903 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD1904 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD1905 Epitaxial Planar Silicon Transistor - Sanyo Semicon Device
2SD1906 PNP/NPN Epitaxial Planar Type Silicon Transistors - Sanyo Semicon Device
2SD1907 PNP/NPN Epitaxial Planar Type Silicon Transistors - Sanyo Semicon Device
2SD1908 NPN Epitaxial Planar Silicon Transistor - Sanyo Semicon Device
2SD1910 SILICON POWER TRANSISTOR - SavantIC
2SD1910 NPN Transistor - INCHANGE
2SD1911 SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)