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2SD1987

Part Number	2SD1987
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1987 DESCRIPTION ·High DC Current Gain- : hFE =...
Datasheet	2SD1987 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1987 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.
5V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications.
·Hammer drive, pulse motor drive applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector P...

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